| 摘要 |
PURPOSE:To prevent the generation of a software error under normal environmental condition by providing a resistor satisfying a prescribed condition between a drain node and a gate node of a memory cell in a static semiconductor memory comprising 6 CMOS transistors (TRs). CONSTITUTION:A resistor RG is connected between a drain node A comprising an n-channel MOSTRQ1 and a p-channel Q3 forming a memory cell section and a gate node B in pairs with the node A. Similarly, a resistor RG is connected between a drain node A comprising an n-channel Q2 and a p-channel Q4 and a gate node B in pairs with the node A. In deciding the value of the resistor RG to satisfy the condition expressed in Equation I, a potential change DELTAV2 of the node A caused by an electric charge Q0 of the node B caused by an ionizing radiation particle in a drain depletion layer of the TR in an off state expressed in Equation II is <=1.05V, where Q0/CT is assumed as 30V and the generation of the software error under normal environmental condition is prevented. In Equation, RT is a larger on-resistance between n-channel and p-channel TRs and CG, CT are capacitances of gate and drain nodes. |
