| 摘要 |
PURPOSE:To improve reliability in the reading operation of data in a semiconductor integrated circuit device provided with a CCD, by providing a conducting layer on the upper part of the main surface of the first semiconductor region through an insulating silm so as to surround the second semiconductor region. CONSTITUTION:A conducting layer 12B is provided on the upper part of a semiconductor region 9 so as to surround a semiconductor region, in which charge transferred through the insulating films 8 and 11 are stored, in a U-shape. The layer 12B is used to transfer the charges from a photodiode and constitutes the output-stage gate of a CCD shift register. Since the conducting layer 12B is formed in the U-shape, the width of a channel formed in the semiconductor region 9 can be made large (gate conductance is made large). The speed of the charging operation to the capacitor element at the output stage of the CCD shift register can be improved. The conducting layer 12B is formed by, e.g., a polycrystal silicon film. |
