发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent crosstalk and oscillation between the wirings of the first layer and the second layer, with the second layer wiring as a shield, by providing the second wiring layer, which is held by the first layer and the third layer among multiple wiring layers at least on the overlapped part of the upper and lower wiring layers, and connecting the second wiring layer to a ground potential. CONSTITUTION:A second aluminum layer film 7 is provided between a first aluminum wiring 3 and a third aluminum wiring 8 and connected to a ground potential. In this way, crosstalk due to parasitic capacity in interlayer insulating films 4a and 4b is grounded through the second aluminum layer film 7. Thus oscillation is stopped, and ''flying'' of a signal to other signal lines can be prevented. Parasitic capacity due to the thin interlayer insulating films at the double-layer wirings of aluminum can be also prevented. A useless region, which is occupied in the case of a single-layer wiring of aluminum, can be eliminated. The size of a chip can be reduced, and high degree of integration can be obtained.
申请公布号 JPS60224244(A) 申请公布日期 1985.11.08
申请号 JP19840078564 申请日期 1984.04.20
申请人 HITACHI MAIKURO COMPUTER ENGINEERING KK;HITACHI SEISAKUSHO KK 发明人 KISHI TAKAO
分类号 H01L23/522;H01L21/768;(IPC1-7):H01L21/88 主分类号 H01L23/522
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