发明名称 SEMICONDUCTOR LASER ELEMEMT
摘要 PURPOSE:To obtain stable oscillation at a basic lateral mode up to high output power, to obtain high differential efficiency and to avoid astigmatism, by gently curving an active layer in the inner region of a resonator, and laminating the active layer flatly at an window region. CONSTITUTION:On a substrate 11, wide, shallow, stripe shaped, first groove 19 is formed, and a narrow, deep, stripe-shaped second groove 20 is overlapped at the center of the first groove 19. A laser operation part having a laser oscillating active layer 14 is deposited on said first and second grooves 19 and 20. The groove width W1 and W2 of the first groove 19 are controlled so that the active layer 14 is curved into the direction of the substrate 11 in a resonator and the layer 14 becomes flat at the end parts of the resonator. Thus the window function of the laser oscillation is formed. A stripe structure, which is to become a current path is formed by the second groove 20. Thus the window semiconductor laser having a stable basic lateral mode and excellent differential efficiency up to high output power can be realized.
申请公布号 JPS60224291(A) 申请公布日期 1985.11.08
申请号 JP19840080904 申请日期 1984.04.20
申请人 SHARP KK 发明人 YAMAMOTO SABUROU;HAYASHI HIROSHI;MORIMOTO TAIJI;YANO MORICHIKA
分类号 H01S5/00;H01S5/16;H01S5/223 主分类号 H01S5/00
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