| 摘要 |
PURPOSE:To equalize plasma treatment, and to improve the decision of an end point by making an opposite electrode smaller than the diameter of a sample and horizontally moving a sample support-base electrode while being turned. CONSTITUTION:In a high-frequency discharge parallel plate type plasma etching device, the areas of an electrode 2 for a sample base and a sample 3 fitted onto the electrode 2 are made wider than an opposite electrode 1, and relative positions to the opposite electrode are changed by the revolution and horizontal motion of a strut 7. Plasma is generated by applying high-frequency power to a gas introduced from a gas introducing port 5 from the electrode 2 for the sample base. Etching reaction products are discharged from vacuum discharge ports 8, 8'. Since the end point of etching is decided by measuring interference beams from the surface of the sample by using a laser 9, uniform plasma treatment is facilitated extremely. |
