| 摘要 |
PURPOSE:To reduce the parasitic inductance between a GND and a source when a mounting process is performed as well as to obtain a stabilized amplifying operation and a high power output on a high frequency zone by a method wherein the Au-plated layer to be turned to the source of a semiconductor device is short-circuited using the conductive material filled in a through hole, and said Au-plate layer is formed with the shortest distance. CONSTITUTION:An MOSFET chip 11 is placed on the Au-plated layer 14 located on a stem 12, and the lower surfaces of the chip 11 and the Au-plated layer 14 are joined together using conductive paste. A through hole A is provided on a beryllia substrate 13 and the Au-plated layer 14, and the upper surface and the lower surface of the Au-plated layer 14 are short-circuited by the conductive material B which penetrates the through hole A. As a result, the Au-plated layer 14 is short-circuited at the shortest distance using the conductive material B. As the lower surface of the Au-plated layer 14 is connected to a GND when a mounting process is performed, the parasitic inductance on the upper surface and the lower surfaces of the Au-plated layer 14 is reduced by the above-mentioned short- circuit, thereby enabling to reduce the parasitic inductance between the GND and a source. |
