| 摘要 |
A surface acoustic wave device with selectable performance parameters such as having a temperature coefficient of zero, is fabricated employing a monocrystalline semiconductor substrate (1) with a combination of appropriate doping and crystallographic orientation both with respect to the surface and the direction of propagation, and having interdigitated conductors (3, 4) on its surface, to which an AC signal is applied. Monocrystalline silicon doped with phosphorous to the order of 2 x 10<1><9> atoms per cc, exhibits a zero temperature coefficient at 300 DEG Kelvin for acoustic waves propagating in the [110] crystallographic direction on a [110] |
