| 摘要 |
PURPOSE:To mix different treating fluids mutually in the whole treating chamber, and to accelerate a reaction uniformly by each forming paths, through which the treating fluids are flowed, in the treating chamber while several paths are arranged so that the fluids are blown off alternately. CONSTITUTION:In a low-pressure CVD device through which a PSG film is formed on a wafer, the inside of a treating chamber 1 is evacuated through an air outlet 5 when a plurality of wafers 7 are aligned and held to a jig 6 and a door 3 is closed, and the treating chamber 1 is heated by a heater 4. Consequently, a mixed gas 15 of SiH4 and PH3 is introduced to a first introducing path 13 and O2 gas 16 to a second introducing path 14 respectively on the outside of the treating chamber 1. Each gas introduced to the first and second introducing paths 13, 14 flows through a first path 9 and a second path 10, and is blown off severally in the approximately perpendicular downward direction from first small hole 11 groups and second small hole 12 groups bored to the first path 9 and the second path 10. Since the first small hole groups 11 and the second small hole groups 12 are mutually disposed alternately at that time, both gases are mixed extending over the whole in which the wafer 7 group is arranged in the treating chamber 1. |
