| 摘要 |
PURPOSE:To incorporate oxygen included in a III-V compound having wide forbidden band width, to reduce oxygen on the interface between a III-V compound semiconductor and an insulating III-V compound and to contrive to realize interfacial characteristics with excellent reproducibility by oxidizing Al depositing on the insulating III-V compound having a wide forbidden band. CONSTITUTION:GaAs is used as a III-V compound semiconductor, a BN film is employed as a III-V compound insulator film having forbidden band width wider than the III-V compound semiconductor, and the BN film is formed by thermally decomposing borazole. Consequently, the BN film 31, an Al layer and an Si3N4 film 33 are laminated on a GaAs substrate 30 to shape a multilayer thin-film, and the whole is thermally treated at a temperature of approximately 600- 800 deg.C. Accordingly, Al reacts with oxygen included in the BN film 31 and is all changed into Al2O3. The experiment on this matter has proved that when an MIS capacitor is formed after the heat treatment process of the multilayer film and interfacial characteristics are evaluated, approximately 10<10>cm<-2> is obtained with excellent reproducibility as an interface level. No hysteresis in the voltage- capacitance characteristics of an MIS diode was observed in the experiment. |
