| 摘要 |
<p>A low-capacity semi-conductor radiation detector for the detection of radiation and particles (T1), having a semi-conductor body of a first type of conductivity (e.g. "n" type), on which is applied at least one collector electrode for the majority carriers. On both main surfaces (1, 2) of the semi-conductor body are regions of a second type of conductivity (p+; p+2, p+4)which form with the semi-conductor body dielectric layers polarized in such a way that the semi-conductor body is practically entirely deprived of majority carriers and a potential gradient (PM) is present in the semi-conductor body, as a result of which the majority carriers produced by radiation flow towards the collector. A method for putting said invention into effect is characterized by the fact that on one of the two main surfaces (2) between the regions of the second type of conductivity (p+2, p+4,) are provided zones of the first type of conductivity (n+1, n+3, n+5) which are polarized in the non-conductive direction in relation to the regions of the second type of conductivity, whereas on the other main surface (1) a large surface region of the second type of conductivity (p+) is provided, with a low surface resistance. Another method of putting into effect said invention is characterized by the fact that, on at least one of the two main surfaces between the regions of the two types of conductivity, zones of the first type of conductivity are provided which are polarized in the non-conductive direction in relation to the regions of the second type of conductivity, and by the fact that external voltages are applied only to the zones or regions on a main surface (figures 3-5).</p> |
