SEMICONDUCTOR LASER DEVICE

摘要

The invention refers to a semiconductor laser device having a strip-shaped impurity-diffused region disposed in at least parts of semiconductor layers, consisting of a first semiconductor layer having an active region, a second semiconductor layer lying in contact with the first semiconductor layer and a surface semiconductor layer, whereby the impurity-diffused region having the same conductivity type as that of the second semi-conductor layer extends at least from the surface semi-conductor layer to a depth close to the first semiconductor layer, and whereby an electrode is disposed on the impurity-diffused region so that a forward current may flow from the electrode through the impurity-diffused region to the first semiconductor layer.
The invention is characterized in that there is disposed between the surface semiconductor layer (6) and the second semiconductor layer (4) a third semiconductor layer (5) having a diffusion rate for the impurity forming the impurity-diffused region (7, 71) lower than within the second semiconductor layer (4).