发明名称 RESISTANCE VALUE ADJUSTING METHOD FOR MULTI-LAYERED CIRCUIT SUBSTRATE
摘要 <p>PURPOSE:To enable to set the resistance value of the resistor of each layer in the prescribed accuracy by a method wherein the resistance value of the resistor formed on the top layer is adjusted by a laser or a sand blast, and the resistance value of the resistor formed on the inner layer is adjusted by applying a high voltage pulse. CONSTITUTION:As the resistor 1e to be formed on the insulative printed substrate 1 of the top layer, a resistor of low resistance value and another resistor for which a highly precise resistance value adjustment is required are formed. Also, as the resistors 2e, 3e and 4e to be formed on the insulative printed substrates 2, 3 and 4 of the inner layers, a resistor with which a large charging rate of resistance value can be obtained and another resistor for which relatively precise resistance value adjustment is not required are formed. Then, the resistance value of the resistor 1e formed on the insulative printed substrate 1 of the top layer is adjusted by a laser or a sand blast, and the resistance values of the resistors 2e, 3e and 4e formed on the insulative printed substrates 2, 3, and 4 of the above-mentioned inner layers are adjusted by applying a high voltage pulse to the individual resistor to be adjusted from a probe terminal 5 through the intermediaries of viaholes 1b, 2b and 3b and the electrodes 2d, 3d, and 4d to be used for resistors.</p>
申请公布号 JPS60223150(A) 申请公布日期 1985.11.07
申请号 JP19840078433 申请日期 1984.04.20
申请人 HITACHI SEISAKUSHO KK 发明人 TOZAKI HIROMI;NAGAYAMA HITOMI;IKEGAMI AKIRA
分类号 H01C17/22;H01L21/48;H01L23/64;H01L27/01;H05K3/46 主分类号 H01C17/22
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