| 摘要 |
PURPOSE:To accomplish saturation type characteristics maintaining a large mutual conductance (gm) of non-saturation type SIT by a method wherein the second gate is provided between the first gate, with which the potential of the potential barrier of an intrinsic gate is controlled, and a drain and the effect of drain voltage is prevented from extending to the first gate. CONSTITUTION:The actual control of the amount of electrons applied to the n<+> region 404 of a drain from the n<+> region 403 of a source is performed by the voltage to be impressed on the p<+> region 405 of the first gate located at the point nearest to a potential barrier 501. Also, by having the interval WG2 of the p<+> regions 406 of the second gate, which is earthed in alternating current from, formed in lGG>WG2 for the interval lGG between the first gate p<+> region 405 and the second gate p<+> region 406, the effect of voltage of the n<+> region 404 of the drain can be shielded by the p<+> region 406 of the second gate. As above-mentioned, the potential barrier 501 of a intrinsic gate region 412 is controlled by the electrostatic induction effect only which is applied to the p<+> region 405 of the first gate. Moreover, by providing non-dependency on the drain voltage by the help of the shielding effect of the p<+> region 406 of the second gate, the saturation type characteristics can be obtained while the high gm of a non- saturation type SIT is being maintained. |
