发明名称 |
HIGH DENSITY SEMICONDUCTOR MEMORY DEVICE AND PROCESS FOR PRODUCING THE SAME |
摘要 |
<p>A charge-pump-memory device is disclosed which comprises an insulating substrate (11) on which are arranged: an n<+> semiconductor region (12) which constitutes a bit line; another n<+> semiconductor region (14) which constitutes a power supply line; and a p-type semiconductor region (13) between the two n<+> semiconductor regions which is a floating base region; a metal wiring layer (16) constituting a word line is situated on an insulating layer (15) over the semiconductor regions, the floating base region being separated from the wiring layer by only a thin portion of the insulating layer. The bit line runs parallel with the power supply line and perpendicular to the metal wiring constituting the word line.</p> |
申请公布号 |
EP0047133(B1) |
申请公布日期 |
1985.11.06 |
申请号 |
EP19810303910 |
申请日期 |
1981.08.26 |
申请人 |
FUJITSU LIMITED |
发明人 |
SASAKI, NOBUO |
分类号 |
H01L29/78;H01L21/265;H01L21/768;H01L21/8242;H01L23/535;H01L27/10;H01L27/108;H01L29/786;(IPC1-7):H01L29/78;G11C11/34;H01L27/12;H01L21/86 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|