| 摘要 |
PURPOSE:To grow a single crystal thin film independently of the crystallinity of a substrate and to obtain the good-quality single crystal thin film by interposing a layer having an m.p. lower than that of a single crystal thin film between the substrate and said thin film in case of heteroepitaxy. CONSTITUTION:In manufacturing a Ge single crystal thin film by using an Si substrate 1, for example, the substrate 1, whose surface is washed and etched, is set in a vacuum vapor deposition device, and the device is evacuated to a specified vacuum degree. Then Sn is vapor-deposited in specified thickness by resistance heating. Successively, a Ge film is vapor-deposited in specified thickness by electron-beam heating to obtain a laminate of the substrate 1, the Sn layer 2 (a low-melting point layer), and the Ge layer 3. The laminate 8 is then treated in a high-frequency heating device having a quartz furnace core tube 4, a push rod 5, a quartz sample stand 6, a carbon-ribbon heater 7, and a carbon supporting stand 9 to make the layer 3 into a single crystal by zone melting.
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