发明名称 Method and apparatus for forming a thin film.
摘要 <p>A thin film (12) is formed on a substrate (11) by causing a pulsed molecular beam (5) from a source (2) to be incident on the substrate (11). The beam (5) is converted to pulses by a chopper (4). The beam (5) passes through an ionisation chamber where a part of it is ionised. The results of the ionation are amplified and converted to an electrical signal which is fed via an amplifier (15) to a measurement device (16), which also receives a signal from a photo-sensor (17) monitoring the chopper 4. The device (16) then calculates the flux and speed of the beam (5) and uses the result to control the source (2) via a controller (3) which controls the current heating the material (1) in the source (2).</p><p>The result is that a direct measurement of the flux and speed of the beam (5) can be obtained, and hence the amount of material arriving at the substrate (11) can be controlled accurately.</p>
申请公布号 EP0160479(A2) 申请公布日期 1985.11.06
申请号 EP19850302794 申请日期 1985.04.22
申请人 HITACHI, LTD. 发明人 YAMAMOTO, SHIGEHIKO
分类号 H01L21/268;C23C14/54;C30B23/08;H01L21/203 主分类号 H01L21/268
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