| 摘要 |
PURPOSE:To provide a titled device which eliminates the need for a power source for supplying electron and reduces energy consumption by introducing a gas into said device, dissociating the same to ion and electron, irradiating the ion on a substrate and irradiating the electron as an electron beam on a metallic material. CONSTITUTION:An ion forming gas is introduced into a plasma generating chamber 3 from an introducing pipe 1 and plasma is generated in a plasma generating region 2 by the thermion released from a filament 4 and a magnet 5 for generating plasma by which the gas is dissociated to ion and electron in the ion beam deposition of a thin film forming device. The ion forms an ion beam by a lead- out electrode 6. The ion beam enters a reaction chamber 7 where energy is given to the beam from a DC power source 8 to irradiate the substrate 9. On the other hand, the electron is focused by a focusing magnet 12 and irradiates the metallic material 10 for vapor deposition in a copper hearth 11 thus heating and evaporating the material. The evaporated material is accelerated by the power source 8 and is ionized in the stage of passing through the region 2. The ion is combined chemically with the above-mentioned gaseous ion and is deposited by evaporation on the substrate 9 on which the thin film is formed.
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