| 摘要 |
PURPOSE:To form a deposited film contg. Si atom at a high film forming speed with low energy level by forming a gaseous atmosphere consisting of a specific Si compd. in a deposition chamber and exciting and decomposing the compd. by light energy. CONSTITUTION:The inside of the deposition chamber 1 in which a substrate 2 is set is evacuated and the substrate 2 is heated by a heater 4. Gaseous raw materials are fed into the chamber 1 from supply sources 9-12 while the flow rates thereof are regulated to form the gaseous atmosphere consisting of the Si compd. expressed by R<1>-(Si.R<2>R<3>)n-R<4>. In the formula, R<1>, R<4> denote halogen- substd. phenyl group, naphthyl group, etc., R<2>, R<3> denote H or CH<3> group, n denotes 3-7. A light energy device 7 is driven in such atmosphere to irradiate the light energy 8 to the gaseous raw materials. The photoexcitation and photodecomposition of the gaseous raw material flowing near the substrate 2 are thus accelerated and the a-Si, etc. which are the formed material are deposited on the substrate 2. |
