发明名称 BIAS SPUTTERING DEVICE
摘要 PURPOSE:To provide a titled device which controls the quantity of the ion plunging into a substrate without increasing a substrate voltage by connecting a target provided to face the substrate electrode to a variable magnetic flux cathode and constituting the same in such a way that the magnetic flux on the target surface can be controlled. CONSTITUTION:The target 5 is provided to face the substrate electrode 2 attached with the substrate 4 on the front face in a vacuum chamber 1 evacuated to a vacuum. The cathode 3 provided with an electromagnet 3a is connected thereto and an earth shield 8 is provided threto. The electrode 2 and cathode 3 are respectively connected to power sources 6, 7 so as to attain the negative potential with the earth potential. The convergent density of plasma discharge is controlled by changing the magnetic flux density on the target 5 by said electromagnet 3a to plunge much of the ion to the substrate 4 in the stage of introducing an inert gas into the chamber 1, generating plasma discharge between the electrode 2 as an anode and the cathode 3 and performing sputtering by the formed ion. The bias effect is thus improved without damaging the substrate and sputtering with good flatness is executed.
申请公布号 JPS60221563(A) 申请公布日期 1985.11.06
申请号 JP19840075737 申请日期 1984.04.17
申请人 NIPPON SHINKU GIJUTSU KK 发明人 OBINATA HISAHARU
分类号 C23C14/36;C23C14/34;C23C14/35;H01J37/34 主分类号 C23C14/36
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