发明名称 PHOTOSENSITIVE RESIN COMPOSITION AND FORMATION OF PATTERN
摘要 PURPOSE:To obtain a negative type resist capable of undergoing dry treatment of a substrate and microfabrication with high resolution and high precision by incorporating a silicon-contg. resin having aromatic rings each having specified substituents on a part or the whole part of the ring, in a photosensitive resin compsn. CONSTITUTION:The silicon-contg. resin may be either of a polysiloxane or polysilane resin, and a polymer of phenylmethylsiloxane, etc., are used for an aromatic polysiloxane resin, and polydiphenylsilane, etc., are used for the polysilane resin. These resing having -CH2N3 group are used alone or together with a a sensitizer, such as aromatic ketones, and a cross-linking agent, such as divinyl compds., etc., as a photosensitive resin. Said sensitizer is used generally in an amt. of 3-20wt% of the silicon-contg. resin, and said cross-linking agent is used 5-25wt% of said resin. They are dissolved in a solvent, applied to the substrate, exposed, and developed to form a pattern. This pattern is used as a mask for treating the substrate to be microprocessed.
申请公布号 JPS60220340(A) 申请公布日期 1985.11.05
申请号 JP19840075846 申请日期 1984.04.17
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 SUKEGAWA TAKESHI;MORITA MASAO
分类号 G03F7/038;G03C5/00;G03C5/08;G03F7/004;G03F7/075;G03F7/11;G03F7/20;G03F7/26;H01L21/027 主分类号 G03F7/038
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