| 摘要 |
PURPOSE:To significantly shorten the developing time and to obtain a resist sensitivity in the same extent as the case in a wet developing as well as to lessen the thinning of film of the unexposed part of the resist film by a method wherein the exposed eledtron beam resist film is exposed with low-temperature gas plasma, and at the same time, a dry developing is performed by exposing a far ultraviolet light on the whole surface of the resist film. CONSTITUTION:A resist film 2 is formed on the surface of a substrate 1 of a semiconductor or a mask and so forth and an electron beam P of a prescirbed pattern is irradiated on this resist film 2. The substrate 1 is housed in the interior of a gas plasma reactor 4, wherein an aluminum cylinder 3 with numerous small holes bored in its inner wall has been disposed, in a vertical condition while being supported by a substrate holder 5. After that, reaction gas including O2 gas is introduced in the reactor 4 from a gas introducing port 6 and is exhausted from an exhausting port 7. During this time, high-frequency voltage, which is supplied from a high-frequency power source 8, is impressed inbetween an upper electrode 9 and a lower electrode 10, which has been earthed, and low-temperature plasma is made to generate in the interior of the reactor 4. At the same time, a light Q, which is emitted from a far ultraviolet light source 11 provided outside of the reactor 4, is made to incide on the side of the film 2 through a filter 12 and a lens 13 and a dry developing is performed. |
