| 发明名称 |
Method for reducing leakage currents in semiconductor devices |
| 摘要 |
A method for reducing leakage currents in passivated semiconductor devices includes subjecting the passivation layer to a corona discharge for reducing or eliminating the inversion layer produced by the characteristic passivation layer charge.
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| 申请公布号 |
US4551353(A) |
申请公布日期 |
1985.11.05 |
| 申请号 |
US19840633675 |
申请日期 |
1984.07.24 |
| 申请人 |
UNITRODE CORPORATION |
发明人 |
HOWER, PHILIP L.;LI, ERIC K. |
| 分类号 |
H01L21/3105;H01L21/56;(IPC1-7):H01L21/326 |
主分类号 |
H01L21/3105 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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