| 摘要 |
PURPOSE:To improve each of ON characteristics and OFF characteristics without sacrificing one of them by making a life time in a semiconductor wafer different in a section containing a lead-out point for a gate than other sections. CONSTITUTION:A section 3A having a small life time contains an emitter 12 the most far from a lead-out point 7 for a gate lead 6 in the surface of a gate turn-OFF thyristor (GTO), and a section 3B having a large life time contains the lead-out point 7 for the lead 6 in the surface of the thyristor. The quantity of carriers lead out of a gate 4 may be small owing to the recombination of carriers by a life time killer in the section 3A. In the section 3B, on the other hand, a range that the lead-out capability of carriers sufficiently extends is kept because a voltage drop due to the resistance of an Al layer and Al wire in the gate 4 is small. According to the GTO, the ON voltage of an element can be reduced because the value of the life time of the section 3B can further be enlarged. Turn-OFF capability can be improved because the value of the life time of the section 3A can be minimized.
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