| 摘要 |
PURPOSE:To shorten the procedure by removing processes with dangers such as the use of organic flux by a method wherein the main surface of a semiconductor substrate finished in wafer processing is covered with a water-soluble resin film, and the back surface of the substrate is flatly ground. CONSTITUTION:The main surface of the semiconductor substrate is coated with a protection film made of a water-soluble resin (polymer substance). 1.0-2.0 [mum] is suitable for the coating thickness. Next, the main surface side of the substrate is fixed from above with a vacuum chuck or the like. Using an organic flux such as freon (carbon tetrafluoride) which does not dissolve the water-soluble resin of the protection film of polyvinyl alcohol, etc. for the cooling liquid, the back surface of the substrate is flatly ground with a grinding plate similar to the conventional one rotating at high speed. |
