| 摘要 |
PURPOSE:To offer new semiconductor devices of super-high speeds by a method wherein the thickness among a base, an emitter, and a collector is set large enough to generate tunnel effect, and a base producing a sub-band to minority carriers is used. CONSTITUTION:The gap between the emitter E and the base B and between the base and the collector C are made thick enough to form barriers PBE and PBC which can generate tunnel effect, so that sub-bands E1 and E2 to minority carriers can be produced in the base region B. The transmission of minority carriers from the emitter E to the collector C is carried out through a resonance tunnel ring. In other words, only in the case of alignment of energy bands to the sub-bands in the base region according to the emitter-base voltage, minority carriers transit from the emitter to the collector. Since this transition is not by thermal diffusion in the conventional case, but by perfect transmission through the resonance tunnel ring, this action becomes extremely speedy. |
