| 摘要 |
PURPOSE:To uniformalize characteristics by a method wherein a deposited film is formed, exciting and decomposing by photo energy after forming the mixed gas atmosphere of the Si compound which contains an azo group directly coupled to the Si atom, and impurities. CONSTITUTION:A substrate 2 is placed on the supporting stand 3 inside a depositing chamber 1, and after decompressing inside the depositing chamber 1, the substrate 2 is heated by a heater 4. Then, opening the valves 14-1, 16-1 of supply source 9 and the valves 14-2, 16-2 of supply source 10, the mixture of stock gas for suppling Si and P type impurity gas are sent into the depositing chamber 1. As the stock gas, the Si compound which contains the azo group directly coupled to the Si atom is used. Consequently, the photo energy generator 7 is operated and irradiates the photo energy and urges the photo-excitation and the photodecomposition. As a result, an amorphous Si and a very small amount of P type impurity atom are deposited on the substrate 2. Thus, the deposited layer with good accuracy and good uniformity is formed. |
