| 摘要 |
PURPOSE:To eliminate the deterioration in resolution or dimentional accuracy due to the intervention of backscattering electrons in electron beam printing of secondary electrons in X-ray exposure and of stationary waves in light exposure, by transferring a pattern form on the uppermost layer of a resist to the lowermost layer of the resist. CONSTITUTION:A resist 2 applied on a substrate 3 is printed with electron beams. The exposure should be sufficiently small, namely 1/5-1/10 of an appropriate exposure. The uppermost portion of the resist 2 is provided with a concave pattern. A material 5 whose etching rate is lower than that of the resist 2 is applied thereon. When siloxane resin is applied, for example, it is etched away in the CF4 gas atmosphere approximately up to the center of the concave pattern. The resist is removed, except for the resist present under the siloxane resin, by etching it in the O2 gas atmosphere with an anisotropic etching apparatus. Thus, a pattern having dimensions identical with the beam dimensions is formed beneath the siloxane resin. |
