| 摘要 |
PURPOSE:To eliminate adverse effect for a metallized film due to secondary electrons and reverse scattering electrons and to form the metallized film excellent in quality by forming the magnetic field due to a magnet in front of the material to be worked in a metallizing apparatus heating and evaporating the metallizing substance with the accelerating electron beam. CONSTITUTION:A thin metallized film is formed on a wafer 1 attached to a holder 2 made of a stainless net by heating and evaporating the metallizing substance with accelerating electron beam. In this case, two pieces of magnets 3, 3 are arranged so that N pole and S pole are oppositely set on the inner wall surfaces of both right and left sides of the holder 2. Since the magnetic field large in magnetic flux density is formed in the space between both the magnets 3, 3, the secondary electrons and reverse scattering electrons other than the metallizing atoms having large energy are inhibited by means of the magnetic field and unreached to the metallized film formed on the wafer 1 and therefore the metallized film is unsubjected to adverse effect due to secondary electron or the like and the metallized film excellent in quality is obtained. |
