| 摘要 |
PURPOSE:To make it possible to form elements without the effect on the characteristics of other elements, to increase the freedom of circuit design, and to expand the functions of the compound element, by forming a part of the elements by utilizing light induction reaction after the formation of the other elements. CONSTITUTION:An MOS transistor 21 is formed on a silicon transistor substrate 1 by a conventional process. By using Ar<+> laser light, a recess part 6 is formed. Oxygen gas is contacted, SOR light is projected and an SiO2 film 7 is formed. The mixed gas of Ga(CH3)3, AsH3, In vapor and Zn vapor is contacted, ArF excimer laser light is projected and the inside of the SiO2 film 7 is buried by InGaAs 8. Sn vapor is contacted, the ArF excimer laser light is projected, Sn ions are implanted and an N type InGaAs layer 9 is formed. A recess part is formed, and an InP layer 10 is formed from the mixed gas of the InP vapor and PH3 by a light CVD method. Thus a photodiode 22 is formed. An oxide film 31, an Al wiring electrode film 11, an SiO2 film 12, a silicon nitride film 13 and an Al film 14 are all formed by light induction reaction. |
