| 摘要 |
PURPOSE:To prevent the decrease in withstanding voltage between an emitter and a collector, in a lateral transistor, by forming a high impurity concentration region, whose conducting type is the same as that of a base region, in a base region, which faces the emitter and the collector. CONSTITUTION:An N<+> type embedded region 11 is formed in a P type semiconductor substrate 10. An N type epitaxial layer 9 is grown in a gaseous phase and made to be a base region. A P type emitter region 1 and a P type collector region 2 are formed. An N<+> type channel preventing region 6 is formed so that it is contacted with the part of the collector region 2, which faces the emitter region 1. Even though the bias of a metal wiring 7, which is connected to the emitter region 1 becomes lower than the bias of the collector region 2, the N<+> region 6 becomes the channel stopper, and the decrease in withstanding voltage due to the formation of the channel can be prevented. |
