| 摘要 |
PURPOSE:To increase a film-forming rate while keeping high quality, by producing gas atmosphere of cyclic silicon hydride compound or compound being substituted by other silicon hydride radical and compound containing a III-family or V-family element in a chamber including substrates and by forming each deposited film containing silicon doped with said element over the respective substrates. CONSTITUTION:Gas atmosphere of cyclic silicon hydride compound or compound being substituted by other silicon hydride radical, expressed by a general expression: SinH2n (n represents an integer of 3, 4, 5, or 6), and compound containing a III-family or V-family element (impurity element) is produced in the chamber including substrates, and these compounds are excited and decomposed by utilizing optical energy, forming each deposited film containing silicon doped with the impurity element over the respective substrates. The resulted deposition film may be crystalline or amorphous and the combination of silicon in the film may be from oligomer to polymer state. |
