| 摘要 |
PURPOSE:To manufacture a BH-DFB-MQW laser diode only through crystal growth processes at twice or less by periodically implanting ions to the sections except a section just under a striped electrode in an active layer in the direction approximately orthogonal to the striped electrode, changing the states of crystals into a mixed crystal and periodically altering a refractive index. CONSTITUTION:Focussed on beams 70 are projected in the vertical direction to the surfaces of a cap layer 4 and a striped electrode 6, and the scanning of line-and-space is executed electrostatically in the direction approximately rectangular to the longitudinal direction of the cap layer and the striped electrode. The direction of the lines 8 of patterns 17 obtained by the projection is made rectangular to the striped electrode 6. When such a laser diode is thermally treated, multiple quantum well structure is broken only in a section 22, to which ions are implanted, in a multiple quantum well layer 21 as an active layer and changed into a mixed crystal. The refractive index of the section 22 is reduced by a change into the mixed crystal, and an adjacent section 23 to which ions are not implanted is not converted into the mixed crystal, and has a refractive index as it is. The repeated structure 24 of the refractive index functions as a distributed feedback as a diffraction grating regarding laser beams, which emit light in a light-emitting region 25 and are propagated along the striped electrode 6. |
