| 摘要 |
PURPOSE:To introduce an impurity to a predetermined region in the vicinity of the surface of an Si substrate by a method wherein a gas containing the impurity is brought into contact with the substrate, ultraviolet beams are projected through a mask to ionize the impurity, the ions are driven into the substrate by an electric field and a defect generated is annealed by beams. CONSTITUTION:An N type Si substrate 1 is placed on a negative plate 4 in a reaction chamber 2 and heated 3 at 100 deg.C, and the inside of the chamber is evacuated and BCl3 7 is introduced at a predetermined flow rate to keep the inside of the chamber at approximately 50Torr. ArF laser beams 9 having 1,930Angstrom are projected from a window for a mask 8 and focussed just above the substrate 1, and changed into beams in 2MW/ cm<2> energy and having a 2mum diameter and the upper section of the substrate is scanned. Ionized B is accelerated by a DC bias between an anode 12 and a cathode 4, and driven to a mask-window facing section in the substrate 1. The inside of the chamber is changed over to N2, an implantation region 4 is supplied with CO2 gas laser beams 16 in the energy of 10MW/cm<2>, and crystal defects are annealed. According to the constitution, only a surface section in an irradiation region is heated in the substrate 1, an existing junction is not displaced, and the substrate can be doped without being brought into contact with the outside air during processes. |
