| 摘要 |
PURPOSE:To obtain a self cut-off thyristor having a small on-state powder loss, a large surge strength and a small control current by providing a thyristor and a transistor connected in parallel on one semiconductor substrate. CONSTITUTION:In the center of an N type semiconductor substrate 1, a thyristor element 2 having a P<+>N PN<+> structure is formed by diffusion, and an N<+> PN transistor element 3 is provided around the thyristor element 2. Between the P type base layers of the elements 2 and 3, while are a continuous layer, an N type emitter layer is formed by diffusion. Then, on the N<+> type end layers of the element 2, an electrode 4 for short-circuiting the adjacent emitter layer is provided, and connected to a cathode terminal K together with an emitter electrode 5 of the element 3. After that, on the other surface of the substrate, an electrode 6 contacting with the P<+> type end layers and the N type base layer of the element 2 and the N<+> type collector layer of the element 3 is provided and connected to an anode terminal A. Moreover, a gate electrode 7 on the base layer of the element 2 is connected to a gate terminal G, and a base electrode 8 of the element 3 to a base terminal B. |
