| 摘要 |
PURPOSE:To enable a required surface area and the depth of an object to be easily heated to a fixded temperature by a method wherein a surface area to be heated is scanned with a light beam with a wavelength and a light amount selected according to the heating temperature and the heating depth. CONSTITUTION:The Si substrate 1 having a film 11 of diffusion impurity source on the surface is placed in a reaction chamber 2, and N2 gas is introduced after evacuation of the chamber 2 by a vacuum pump 3. Then, a region of the substrate 1 where the impurity is to be reduced is scanned with a near infrared oscillated beam 5 of YAG laser incident onto the substrate 1. Thereby, the surface of the substrate is heated, and the impurity diffuses out of the film 11 into the substrate 1 only at the region irradiated with the beam. This manner enables only the required region to be heated to a fixed temperatue to a fixed depth by changing and controlling the light wavelength and the light amount. |
