| 摘要 |
PURPOSE:To variably produce a light emitting output variable in the amplitude of a forward current flowing to a light emitting P-N junction by applying a reverse bias voltage to a gate P-N junction to alter the amplitude, thereby varying the depletion layer of the gate P-N. CONSTITUTION:A forward voltage is applied to an anode 10 positively and to a cathode 8 negatively, a gate power source switch 11 is opened. Thus, since large forward current is flowed to show by an arrow in the state that a gate electrode 9 is not applied by a reverse bias, strong light is obtained. However, when a gate power source switch 11 is closed to apply a reverse bias voltage to the electrode 9, a depletion layer of a P-N junction is extended, and the width of the gap between insulating layers 3 is narrowed. Therefore, the forward current flowed thereto decreases to reduce the emitting light output. If the reverse bias voltage applied to the electrode 9 is increased more, the emitting light output decreases more. |
