| 摘要 |
PURPOSE:To contrive the improvement in open voltage and in photoelectric conversion current by a method wherein a clear electrode for preventing the diffusion of harmful atoms is interposed between a clear electrode and a photoelectric conversion semiconductor layer. CONSTITUTION:The clear electrode 12a is deposited on a glass substrate 11. The clear electrode 12b for preventing the diffusion of harmful atoms is laminated on the electrode 12a, further, a P-I-N photoelectric conversion semiconductor layer 13 is deposited thereon, and a back electrode 14 is laminated on the layer 13. Si oxide, Ge oxide, IV-a group metal oxide, VI-a group metal nitride, V-a group metal nitride, VI-a group metal nitride, or the like is used as the electrode 12a. The specific resistance value of the used substance is 10<7>OMEGA/cm or less. Such a construction can prevent the diffusion of harmful atoms of In or Sn, thereby improving the open voltage and the photoelectric conversion current. |
