发明名称 DICING METHOD FOR WAFER
摘要 <p>PURPOSE:To enable the improvement in integration density of elements by preventing chipping by a method wherein a guard layer made of a metallic layer softer than a semiconductor material is formed on the surface in a region to be diced except regions which a dicing blade contacts. CONSTITUTION:In the dicing region 11 between the element-forming regions of a water, the guard ring layer 13 made of Al is formed on the surface except that of the region 12 which the dicing blade contacts. Such a wafer is adsorbed to a wafer-adsorbing table and then diced into individual chips while being cut along the region 11 successively in its thickness direction by rotating the dicing blade and at the same time moving it. In this case, chipping generates in the region, however, since the layer 13 are formed on the substrate surface except that of a section in this region which the dicing blade contacts, the chipping is stopped in the layer 13 without coming into the element-forming regions 10. This manner enables the enhancement in integration degree of elements because of no need to enlarge the dicing region in consideration of chipping.</p>
申请公布号 JPS60216565(A) 申请公布日期 1985.10.30
申请号 JP19850046588 申请日期 1985.03.11
申请人 HITACHI SEISAKUSHO KK 发明人 MORITA TADAHISA;UNNO TASUKU
分类号 H01L21/301;H01L21/78;(IPC1-7):H01L21/78 主分类号 H01L21/301
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