| 摘要 |
<p>A method of manufacturing a semiconductor device has the steps of forming at least one groove (24, 25) in a semiconductor substrate having at least one well (22, 23) in a surface region thereof, forming an insulating film (26) on the overal surface of the semiconductor substrate (21) including an inner surface of the groove (24, 25), selectively etching the insulating film (26) so as to leave the insulating film (26a, 26b) in the groove, and burying a conductive material in the groove whose inner surface is covered with the remaining insulating film so as to form a conductive layer (28a, 28b) which is connected to at least one member selected from the group consisting of the well (22, 23) and the semiconductor substrate (21), and to a power supply.</p> |
