| 摘要 |
PURPOSE:To contrive the stabilization of a current vs. voltage characteristics of the injection type light emitting semiconductor device and improvement in the light emitting efficiency thereof by isolating a P-N junction from a hetero junction to eliminate the discontinuous connection in the vicinity of the P-N junction. CONSTITUTION:A Zn doped P type Ga0.65Al0.35As12 is superimposed on a Zn- doped P type GaAs substrate 11, and Ga0.2Al0.8As13, 14 are laminated thereon. It is heat treated to diffuse the Zn in the layer 12 to form a P type layer 13, and to increase the thickness of the film higher than the diffusion distance of minority carrier. Te is doped in the layer 15. Further, N<+> type GaAs 15 and Au-Ge-Ni electrode 16 is attached thereto. Positive electrode 17 is evaporating Au-Zn to fix Ag paste 18 to a jig 19. The layers 13, 14 form P-N junction 21, and the layers 12, 13 form the hetero junction 22 to be isolated from each other. Accordingly, current vs. voltage characteristics thereof do not occur switching phenomenon to emit light in high reproducibility. |
