| 摘要 |
PURPOSE:To improve the frequency characteristics and the noise-resisting property of the titled image sensor by a method wherein, in a manuscript reading device such as a facsimile transmitting device, a copying device or the like, the resistance value of a light conductive film is reduced by having the width of the light conductive film coincided with the length in auxiliary scanning direction of longer bit area length. CONSTITUTION:When an image sensor is manufactured, microscopic patterns of thin film resistors or thin film metal layers of 4-1, 4-2, and 5-1-5-4 are formed. To be more precise, these thin film resistor or thin film layer patterns are formed by lifting-off NiCr, Cr-SiO, Al-Cu and the like having the thickness of 100nm or below. The resistor pattern as shown in the diagram can be formed easily if the material to be used sufficiently thin in thickness. Besides, the metal electrodes, to be used for lead wire, 1-1', 1-2', 2-1'-2-4' which will be connected to the resistor or thin film metal layer pattern is formed by NiCr-Au, Au, Al, Al-Cu and the like of 3,000Angstrom or more in thickness, and the resistance value of which is very small when compared with that of the thin film resistor or the thin film metal layer. |
