Silicon source component for use in molecular beam epitaxial growth apparatus

摘要

A quantity of silicon serving as a source of the element silicon for use in a molecular beam epitaxial growth apparatus where the silicon is in the form of a monocrystalline wafer with a plurality of electrically parallel filaments separated by slots that pass completely through the wafer, each filament having a length dimension that is greater than the width and height dimensions, joined at a broad contact area at each filament end and where an electric current is passed through the filaments through the broad contact areas.