发明名称 Voltage transient protection circuit for MOSFET power transistors
摘要 A pair of MOSFET power transistors are connected in a push-pull configuration to drive a tapped transformer and a load. A pair of diodes and an energy coupling circuit containing a capacitor and resistor in parallel bias the transformer primary in such a manner as to limit transients in a nonconducting MOSFET when the other MOSFET is conducting, aided by a drop in voltage at an inductor (ferrite bead) network which develops at the moment of MOSFET transistor conduction. This is due to a momentary change in the impedance ratio.
申请公布号 US4550359(A) 申请公布日期 1985.10.29
申请号 US19840578922 申请日期 1984.02.10
申请人 HONEYWELL INC. 发明人 WEST, GERALD W.
分类号 H03K17/0814;(IPC1-7):H02H9/04 主分类号 H03K17/0814
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