发明名称 |
SELF-ALIGNING MASK |
摘要 |
<p>SELF-ALIGNING MASK A process for forming a self aligned resist mask over a surface of an alumina ceramic substrate having a conductive molybdenum pattern at said surface by first blanket coating the surface with a negative resist sensitive to aluminum emitting X-rays. A blanket dosing of the substrate with resist insensitive X-rays occurs to induce X-ray emission by the aluminum of said substrate to penetrate said resist. The aluminum X-ray emission is screened by said molybdenum pattern at the surface and the resist adjacent the surface molybdenum pattern is penetrated by the aluminum X-ray emission. The resist is developed for removal thereof over the molybdenum pattern while retaining the resist doped by said aluminum X-ray emission. Further metalization can be accomplished by evaporation or sputtering to blanket coat the developed resist with a conductive metal followed by removal of the resist with the metal coating thereon such that the metal coating is retained on the molybdenum pattern.</p> |
申请公布号 |
CA1196112(A) |
申请公布日期 |
1985.10.29 |
申请号 |
CA19830438412 |
申请日期 |
1983.10.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WALKER, GEORGE A. |
分类号 |
H01L21/027;G03F7/20;G03F7/26;H01L21/30;H05K3/24;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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