发明名称 METHOD FOR FORMING MAGNETIC GARNET THIN FILM
摘要 PURPOSE:To obtain stably a garnet film of the same composition as a bulk material, by treating a magnetic garnet material expressed by a specific formula by the high-frequency sputtering method to form a film on a substrate, and treating the resultant film at a high temperature under specific conditions. CONSTITUTION:A high-frequency electric power at 7-110W/cm<2> is applied to a magnetic garnet material, expressed by the compsn. formula {Gd2Y3-2x-zCa2x} (Fe2-yIny)(Fe3-xVx)O12, and satisfying 0<=x<=0.6, 0<=y<=0.6 and 0.6<=z<=2.6 as a target by the high-frequency sputtering method to form a film on a substrate. The resultant film is then treated at a temperature as high as 300-1,450 deg.C in the air or oxygen atmosphere.
申请公布号 JPS60215598(A) 申请公布日期 1985.10.28
申请号 JP19840071871 申请日期 1984.04.12
申请人 YASUKAWA DENKI SEISAKUSHO KK 发明人 HARA KENJI;IKEDA MITSUAKI;YAMASHITA SHINJI
分类号 C01G49/00;C30B1/02;C30B23/02;C30B29/28;C30B33/00;H01F10/24 主分类号 C01G49/00
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