发明名称 APPARATUS FOR VAPOR-PHASE GROWTH
摘要 PURPOSE:To prevent the occurrence of particles with a tube wall, etc., by directing gas jet nozzles to given coordinates facing the tube wall only at a growth temperature, and changing over the nozzles to face a downward gas discharge outlet otherwise. CONSTITUTION:A susceptor 1 supporting plural wafers 9 is rotated by a motor 4, and a reaction tube 3 is heated by infrared lamps 6 to jet a gas from nozzles 5 and 5'. The gas collides with a tube wall, turns helically round the susceptor 1 to flow to a gas discharge outlet 8 and form a uniform vapor-phase growth layer. In the process, nozzles 11 and 11' having bent tips 12 and 12' respectively are used as the nozzles 5 and 5', and mounted rotatably aslant to the reaction tube 3. At the growth temperature, the tips 12 and 12' are directed to given coordinates in the direction of the tube wall, and the nozzles 11 and 11' are rotated to direct the tips 12 and 12' thereof in the direction of the downward gas discharge outlet 8 below the growth temperature. Thus, the above-mentioned apparatus is usable for a long time.
申请公布号 JPS60215594(A) 申请公布日期 1985.10.28
申请号 JP19840068613 申请日期 1984.04.06
申请人 FUJITSU KK 发明人 MIENO FUMITAKE
分类号 C30B25/14;H01L21/02 主分类号 C30B25/14
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