| 摘要 |
PURPOSE:To grow a single crystal film of a desired compound without using a single crystal substrate, by forming the film of the desired compound on a substrate other than a single crystal, covering the compound film with a substance having the lowest melting point and vapor pressure in component substances constituting the compound film, and heat-treating the covered film under specific conditions. CONSTITUTION:A flat glass, metal plate or ceramic plate, etc. is used as a substrate 1, and a compound film 2, e.g. InP or GaAs, is formed on the substrate 1. The compound film 2 is then covered with a film 3 of a component substance, e.g. In in InP or Ga in GaAs, having the lowest melting point and vapor pressure in component substances constituting the compound film 2, and the compound film 2 covered with the film 3 is heated at a temperature within a range including the melting point of the compound film 2, cooled and converted into a single crystal. |
