发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 PURPOSE:To provide a highly efficient and reliable high-power device furnished with an excellent reflection film structure capable of withstanding heavy duties by a method wherein one of the reflecting surfaces of an oscillator is coated with a first metal film which is further coated with a second metal film whose reflectivity is higher than that of the first metal film. CONSTITUTION:A first metal film 20 is a Ti film typically 100Angstrom thick formed on a dielectric film 19 by means of evaporation or sputtering. A second metal film 21 is formed, which is a 0.1-0.2mum-thick Au film attached to the first metal film 20. The first metal film 20 functions only to augment adhesion between the second metal film 21 and the dielectric film 19, and is composed of Ti, Ni, Cr, Mo, or W, with its thickness thin enough to cause but a sufficiently small optical loss. The second metal film 21 is the reflecting film, and is built of such a high-reflectivity metal as Al, Au, Ag, Cu, Pt, or the like.
申请公布号 JPS60214578(A) 申请公布日期 1985.10.26
申请号 JP19840071432 申请日期 1984.04.10
申请人 FUJITSU KK 发明人 OOSAKA SHIGEO
分类号 H01S5/00;H01S5/028 主分类号 H01S5/00
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