| 摘要 |
PURPOSE:To prevent contamination or damage by foreign matters such as dust, to improve the quality and the yield of a substrate and to contrive improving the efficiency of treating works by carrying in and out of a vacuum treatment chamber a semiconductor substrate through an auxiliary vacuum chamber. CONSTITUTION:Vacuum gate valves 11, 12 to a vacuum treatment container 1 wherein ions are implanted into a semiconductor substrate are closed and a cartridge 20 is carried in and out of auxiliary vacuum chambers 9, 10 through vacuum gate valves 13, 14 of an inlet side and an outlet side by cartridge transfer means 21, 22, 23. Further, the vacuum gate valves 13, 14 of the inlet and the outlet to the outside of the chamber are closed, the inside of the auxiliary vacuum chamber 9 is made a vacuum and a semiconductor substrate 6 is loaded or unloaded one by one between the cartridge 20 carried in the auxiliary vacuum chamber and a disk 3 in the vacuum treatment container by substrate handling means 24. In these constructions, all the exchanges of the substrates are carried out in vacuum and the depreciation of the quality and the yield of the substrate due to dust suspended in the atmosphere and fine grain like dust generated during transfer can be prevented. |
