| 摘要 |
PURPOSE:To enable to increase the capacity per unit area without changing the thicknesses of the insulating films and the dielectric constants and to realize plural semiconductor capacitors without increasing the area of the semiconductor substrate by a method wherein the nsulating films, which are respectively used as a dielectric, and the conductive layers, which are respectively used as a plane-parallel plate, are formed by superposing and the conductive layers are electrically connected with one another. CONSTITUTION:A first capacitor of a structure, wherein a first conductive layer 3 and a second conductive layer 2 are respectively used as a pole plate and a second insulating film 4 is used as a dielectric; a second capacitor of a structure, wherein the second conductive layer 5 and a third conductive layer 7 are respectively used as a pole plate and a third insulating film 6 is used as a dielectric; and a third capacitor of a structure, wherein the third conductive layer 7 and a fourth conductive layer 9 are respectively used as a pole plate and a fourth insulating film 8 is used as a dielectric; are constituted. The first, second and third capacitors are connected in parallel with one another by connecting members 10 and 11. Accordingly, plural capacitors, which have respectively a capacity per unit area larger than that of a conventional semiconductor capacitor, are obtained by using the connecting points of the connecting members 10 and 11 as the terminals of the semiconductor capacitors. |
